Toshiba Launches 100V N-Channel Power MOSFET with Its Latest Generation Process Technology[1] to Improve Efficiency in Switched-Mode Power Supplies for Industrial Equipment
News > Business News

Audio By Carbonatix
1:41 AM on Thursday, September 25
The Associated Press
KAWASAKI, Japan--(BUSINESS WIRE)--Sep 25, 2025--
Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched “ TPH2R70AR5,” a 100V N-channel power MOSFET fabricated with U-MOS11-H, Toshiba’s latest-generation process [1]. The MOSFET targets applications such as switched-mode power supplies for industrial equipment used in data centers and communications base stations. Shipments start today.
This press release features multimedia. View the full release here: https://www.businesswire.com/news/home/20250924029500/en/
Toshiba: TPH2R70AR5, a 100V N-channel power MOSFET with the latest generation process technology.
The 100V U-MOS11-H series improves on the drain-source On-resistance (R DS(ON) ), total gate charge (Q g ) and the trade-off between them (R DS(ON) × Q g ) delivered by Toshiba’s existing generation process, the U-MOSX-H series, reducing both conduction and switching power losses.
TPH2R70AR5 offers approximately 8% lower R DS(ON) and 37% lower Q g against TPH3R10AQM, a U-MOSX-H series product, plus a 42% improvement in R DS(ON) × Q g. It also achieves high-speed body diode performance through the application of lifetime control technology [2], which reduces reverse recovery charge (Q rr ) and suppresses spike voltage. Q rr is improved by approximately 38% and the R DS(ON) × Q rr is also improved by approximately 43%. These industry-leading [3] trade-off characteristics [4], both R DS(ON) × Q g and R DS(ON) × Q rr, minimize power loss, contributing to higher efficiency and power density in power supply systems. It also adopts the SOP Advance (N) package and offers excellent mounting compatibility with industry standards.
Toshiba also offers circuit design support tools: the G0 SPICE model, which verifies circuit function in a short time; and highly accurate G2 SPICE model that accurately reproduces transient characteristics. All are now available.
Toshiba will continue to expand its lineup of low-loss MOSFETs that enable more efficient power supplies and contribute to lower equipment power consumption.
Notes:
[1] As of September 2025, among Toshiba’s process technologies for low-voltage power MOSFETs. Toshiba survey.
[2] Lifetime control technology: Intentionally shortening the carrier lifetime by using an ion beam to introduce defects into the semiconductor enhances switching speed, which improves the recovery speed of the diode and reduces noise.
[3] As of September 2025, comparison with other 100V N-channel power MOSFETs for industrial equipment. Toshiba survey.
[4] R DS(ON) ×Q g: 120mΩ・nC (typ), R DS(ON) ・Q rr: 127mΩ×nC (typ)
Applications
- Power supplies for industrial equipment used in data centers and communications base stations
- Switched-mode power supplies (high efficiency DC-DC converters, etc.)
Features
- Low drain-source On-resistance: R DS(ON) =2.7mΩ (max) (V GS =10V, I D =50A, T a =25°C)
- Low total gate charge: Q g =52nC (typ.) (V DD =50V, V GS =10V, I D =50A, T a =25°C)
- Low reverse recovery charge: Q rr =55nC (typ.) (I DR =50A, V GS =0V, -dI DR /dt=100A/μs, T a =25°C)
Main Specifications
(Unless otherwise specified, T a =25°C) | ||||
Part number | ||||
Absolute | Drain-source voltage V DSS (V) | 100 | ||
Drain current (DC) I D (A) | T c =25°C | 190 | ||
Channel temperature T ch (°C) | 175 | |||
Electrical | Drain-source On- | V GS =10V, I D =50A | Max | 2.7 |
V GS =8V, I D =50A | Max | 3.6 | ||
Total gate charge | V DD =50V, V GS =10V, | Typ. | 52 | |
Gate switch | Typ. | 17 | ||
Output charge Q oss | V DD =50V, V GS =0V, | Typ. | 106 | |
Input capacitance | V DS =50V, V GS =0V, | Typ. | 4105 | |
Reverse recovery | I DR =50A, V GS =0V, -dI DR /dt=100A/μs | Typ. | 55 | |
Package | Name | SOP Advance(N) | ||
Size (mm) | Typ. | 5.15×6.1 | ||
Sample Check & Availability |
Follow the link below for more on the new product.
TPH2R70AR5
Follow the link below for more on Toshiba’s MOSFETs.
MOSFETs
Follow the link below for more on the highly accurate SPICE models (G2 model).
G2 model
To check availability of the new products at online distributors, visit:
TPH2R70AR5
Buy Online
* Company names, product names, and service names may be trademarks of their respective companies.
* Information in this document, including product prices and specifications, content of services and contact information, is current on the date of the announcement but is subject to change without prior notice.
About Toshiba Electronic Devices & Storage Corporation
Toshiba Electronic Devices & Storage Corporation, a leading supplier of advanced semiconductor and storage solutions, draws on over half a century of experience and innovation to offer customers and business partners outstanding discrete semiconductors, system LSIs and HDD products.
Its 19,400 employees around the world share a determination to maximize product value, and to promote close collaboration with customers in the co-creation of value and new markets. The company looks forward to building and to contributing to a better future for people everywhere.
Find out more at https://toshiba.semicon-storage.com/ap-en/top.html
View source version on businesswire.com:https://www.businesswire.com/news/home/20250924029500/en/
CONTACT: Customer Inquiries:
Power & Small Signal Device Sales & Marketing Dept.
Tel: +81-44-548-2216
Contact UsMedia Inquiries:
C. Nagasawa
Communications & Market Intelligence Dept.
Toshiba Electronic Devices & Storage Corporation
KEYWORD: JAPAN NORTH AMERICA ASIA PACIFIC
INDUSTRY KEYWORD: DATA MANAGEMENT SEMICONDUCTOR TECHNOLOGY MANUFACTURING TELECOMMUNICATIONS OTHER MANUFACTURING HARDWARE
SOURCE: Toshiba Electronic Devices & Storage Corporation
Copyright Business Wire 2025.
PUB: 09/25/2025 01:41 AM/DISC: 09/25/2025 01:41 AM
http://www.businesswire.com/news/home/20250924029500/en